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Parameter | Value |
---|---|
Gate Charge | 100 nC |
Gate to Source Threshold Voltage | 1.6 V |
Continuous Drain Current (ID) | 138 A |
Max Operating Temperature | 150 °C |
Min Operating Temperature | -55 °C |
Drain to Source Resistance | 1.8 mΩ |
Input capacitance | 4.85 nF |
Gate to Source Voltage (Vgs) | -20 V, 20 V |
Power Dissipation | 83 W |
Drain to Source Breakdown Voltage (Vds) | 30 V |
Number of Channels | 1 |
Packaging | Tube |
RoHS | Compliant |
FET Type(Transistor Polarity) | N-Channel |
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