AGM635E
Manufacturer:
AGM-Semi
Mfr.Part #:
AGM635E
Datasheet:
Description:
MOSFETs SOT-23-3 SMD/SMT N-Channel number of channels:1 1.2 W 60 V Continuous Drain Current (ID):5 A 20 nC
| Parameter | Value |
|---|---|
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Packaging | Reel |
| RoHS | Compliant |
| Power Dissipation | 1.2 W |
| Number of Channels | 1 |
| Input capacitance | 980 pF |
| Continuous Drain Current (ID) | 5 A |
| FET Type(Transistor Polarity) | N-Channel |
| Gate Charge | 20 nC |
| Drain to Source Resistance | 32 mΩ |
| Gate to Source Voltage (Vgs) | -20 V, 20 V |
| Drain to Source Breakdown Voltage (Vds) | 60 V |
| Gate to Source Threshold Voltage | 1.5 V |
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