Parameter | Value |
---|---|
Gate Charge | 0.6 nC |
Gate to Source Threshold Voltage | 2.5 V |
Continuous Drain Current (ID) | 250 mA |
Max Operating Temperature | 150 °C |
Min Operating Temperature | -55 °C |
Drain to Source Resistance | 7.5 Ω |
Input capacitance | 50 pF |
Gate to Source Voltage (Vgs) | -20 V, 20 V |
Power Dissipation | 350 mW |
Drain to Source Breakdown Voltage (Vds) | 60 V |
Number of Channels | 1 |
Packaging | Reel |
RoHS | Compliant |
FET Type(Transistor Polarity) | N-Channel |
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