TC58BYG0S3HBAI6
Manufacturer:
Toshiba
Mfr.Part #:
TC58BYG0S3HBAI6
Datasheet:
Description:
Memory VFBGA-60 SMD/SMT EEPROM, NAND, SLC NAND 1 Gb
| Parameter | Value |
|---|---|
| Max Operating Temperature | 85 °C |
| Min Operating Temperature | -40 °C |
| Number of Pins | 67 |
| Packaging | Tray |
| Radiation Hardening | No |
| RoHS | Compliant |
| Interface | Parallel, Serial |
| Memory Size | 1 Gb |
| Memory Type | EEPROM, NAND, SLC NAND |
| Operating Supply Voltage | 1.8 V |
| Max Supply Voltage | 1.95 V |
| Min Supply Voltage | 1.7 V |
| Access Time | 25 ns |
| Density | 1 Gb |
| Page Size | 2 kB |
| Memory Format | FLASH |
| Write Cycle Time - Word, Page | 25 ns |
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