Parameter | Value |
---|---|
Gate Charge | 30 nC |
Gate to Source Threshold Voltage | -0.5 V to -1.2 V |
Continuous Drain Current (ID) | -4.2 A |
Max Operating Temperature | 150 °C |
Min Operating Temperature | -55 °C |
Drain to Source Resistance | 53 mΩ |
Input capacitance | 900 pF |
Gate to Source Voltage (Vgs) | -12 V, 12 V |
Power Dissipation | 830 mW |
Drain to Source Breakdown Voltage (Vds) | -20 V |
Number of Channels | 1 |
Packaging | Reel |
RoHS | Compliant |
FET Type(Transistor Polarity) | P-Channel |
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