SI3447DV-T1-E3-VB
Manufacturer:
VBsemi
Mfr.Part #:
SI3447DV-T1-E3-VB
Datasheet:
Description:
MOSFETs SOT-23-6 SMD/SMT P-Channel number of channels:1 3 W -30 V Continuous Drain Current (ID):-4.8 A 10 nC
| Parameter | Value |
|---|---|
| Packaging | Reel |
| RoHS | Compliant |
| FET Type(Transistor Polarity) | P-Channel |
| Number of Channels | 1 |
| Drain to Source Breakdown Voltage (Vds) | -30 V |
| Gate to Source Voltage (Vgs) | 20 V |
| Power Dissipation | 3 W |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Continuous Drain Current (ID) | -4.8 A |
| Gate to Source Threshold Voltage | -0.5 V to -2 V |
| Gate Charge | 10 nC |
| Drain to Source Resistance | 49 mΩ |
| Input capacitance | 450 pF |
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